Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy

Title
Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy
Authors
Keywords
-
Journal
JOURNAL OF CRYSTAL GROWTH
Volume 310, Issue 13, Pages 3154-3158
Publisher
Elsevier BV
Online
2008-04-02
DOI
10.1016/j.jcrysgro.2008.03.033

Ask authors/readers for more resources

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now