Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius

Effects of capping on GaN quantum dots deposited on Al0.5Ga0.5N by molecular beam epitaxy

(2009) M. Korytov et al.   APPLIED PHYSICS LETTERS

A complementary geometric model for the growth of GaN nanocolumns prepared by plasma-assisted molecular beam epitaxy

(2009) C.T. Foxon et al.   JOURNAL OF CRYSTAL GROWTH

Critical diameters and temperature domains for MBE growth of III-V nanowires on lattice mismatched substrates

(2009) G. E. Cirlin et al.   Physica Status Solidi-Rapid Research Letters

Large anisotropic adatom kinetics on nonpolar GaN surfaces: Consequences for surface morphologies and nanowire growth

(2009) Liverios Lymperakis et al.   PHYSICAL REVIEW B

Preferential Interface Nucleation: An Expansion of the VLS Growth Mechanism for Nanowires

(2008) Brent A. Wacaser et al.   ADVANCED MATERIALS

Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy

(2008) K.A. Bertness et al.   JOURNAL OF CRYSTAL GROWTH

On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy

(2008) Jelena Ristić et al.   JOURNAL OF CRYSTAL GROWTH

Growth of nanowires

(2008) N. Wang et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Point Defect Configurations of Supersaturated Au Atoms Inside Si Nanowires

(2008) Sang Ho Oh et al.   NANO LETTERS

Secondary Ion Mass Spectrometry of Vapor−Liquid−Solid Grown, Au-Catalyzed, Si Wires

(2008) Morgan C. Putnam et al.   NANO LETTERS

Growth kinetics and crystal structure of semiconductor nanowires

(2008) V. G. Dubrovskii et al.   PHYSICAL REVIEW B

Interface and Wetting Layer Effect on the Catalyst-Free Nucleation and Growth of GaN Nanowires

(2008) Toma Stoica et al.   Small