Journal
NANOTECHNOLOGY
Volume 21, Issue 29, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/21/29/295605
Keywords
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Funding
- Carnot Eclairage
- [MAT2007-60643]
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By using a marker technique based on nanowire (NW) heterostructure, we have identified the Ga-limited and N-limited GaN NW growth regimes, which are shifted in comparison to those in two-dimensional GaN layers. The results show that the Ga atoms diffusing along NW sidewalls have a significant contribution to the NW vertical growth. By reducing the substrate temperature, Ga-rich conditions locally activate the lateral growth. In contrast to Ga atoms, the contribution of Al and N adatom diffusion to the NW vertical growth is negligible. Finally, the control of GaN/AlN heterostructures in NWs is demonstrated.
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