Optimized single-layer MoS2 field-effect transistors by non-covalent functionalisation
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Title
Optimized single-layer MoS2 field-effect transistors by non-covalent functionalisation
Authors
Keywords
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Journal
Nanoscale
Volume 10, Issue 37, Pages 17557-17566
Publisher
Royal Society of Chemistry (RSC)
Online
2018-09-19
DOI
10.1039/c8nr02134a
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Note: Only part of the references are listed.- Mechanism and Origin of Hysteresis in Oxide Thin-Film Transistor and Its Application on 3-D Nonvolatile Memory
- (2017) Zhi Ye et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Effects of high-k dielectric environment on the full ballistic transport properties of monolayer MoS2 FETs
- (2017) Xian-Jiang Song et al. JOURNAL OF APPLIED PHYSICS
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- (2017) NATURE MATERIALS
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- (2017) Adam G. Kelly et al. SCIENCE
- Effect of Al2O3 Deposition on Performance of Top-Gated Monolayer MoS2-Based Field Effect Transistor
- (2016) Jeong-Gyu Song et al. ACS Applied Materials & Interfaces
- High-Performance Hybrid Electronic Devices from Layered PtSe2 Films Grown at Low Temperature
- (2016) Chanyoung Yim et al. ACS Nano
- Enhancement of carrier mobility in MoS2 field effect transistors by a SiO2 protective layer
- (2016) Peng-Zhi Shao et al. APPLIED PHYSICS LETTERS
- Design, Modeling, and Fabrication of Chemical Vapor Deposition Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics
- (2016) Lili Yu et al. NANO LETTERS
- Thickness-dependent charge transport in few-layer MoS2field-effect transistors
- (2016) Ming-Wei Lin et al. NANOTECHNOLOGY
- Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
- (2016) Qingkai Qian et al. Scientific Reports
- Top-gated chemical vapor deposited MoS2 field-effect transistors on Si3N4 substrates
- (2015) A. Sanne et al. APPLIED PHYSICS LETTERS
- On-surface derivatisation of aromatic molecules on graphene: the importance of packing density
- (2015) Sinéad Winters et al. CHEMICAL COMMUNICATIONS
- Atomic layer deposition on 2D transition metal chalcogenides: layer dependent reactivity and seeding with organic ad-layers
- (2015) Christian Wirtz et al. CHEMICAL COMMUNICATIONS
- Radio Frequency Transistors and Circuits Based on CVD MoS2
- (2015) Atresh Sanne et al. NANO LETTERS
- Understanding and optimising the packing density of perylene bisimide layers on CVD-grown graphene
- (2015) Nina C. Berner et al. Nanoscale
- Exploring atomic defects in molybdenum disulphide monolayers
- (2015) Jinhua Hong et al. Nature Communications
- Atomic Layer Deposition of a High-k Dielectric on MoS2 Using Trimethylaluminum and Ozone
- (2014) Lanxia Cheng et al. ACS Applied Materials & Interfaces
- Interface Engineering for High-Performance Top-Gated MoS2Field-Effect Transistors
- (2014) Xuming Zou et al. ADVANCED MATERIALS
- Controlled synthesis of transition metal dichalcogenide thin films for electronic applications
- (2014) Riley Gatensby et al. APPLIED SURFACE SCIENCE
- Mesoscale Imperfections in MoS2 Atomic Layers Grown by a Vapor Transport Technique
- (2014) Yingnan Liu et al. NANO LETTERS
- Electronics based on two-dimensional materials
- (2014) Gianluca Fiori et al. Nature Nanotechnology
- Photodetectors based on graphene, other two-dimensional materials and hybrid systems
- (2014) F. H. L. Koppens et al. Nature Nanotechnology
- Two-dimensional flexible nanoelectronics
- (2014) Deji Akinwande et al. Nature Communications
- Edge and confinement effects allow in situ measurement of size and thickness of liquid-exfoliated nanosheets
- (2014) Claudia Backes et al. Nature Communications
- Transition Metal Dichalcogenide Growth via Close Proximity Precursor Supply
- (2014) Maria O'Brien et al. Scientific Reports
- Improved Growth Behavior of Atomic-Layer-Deposited High-k Dielectrics on Multilayer MoS2 by Oxygen Plasma Pretreatment
- (2013) Jaehyun Yang et al. ACS Applied Materials & Interfaces
- HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability
- (2013) Stephen McDonnell et al. ACS Nano
- High-Performance Sensors Based on Molybdenum Disulfide Thin Films
- (2013) Kangho Lee et al. ADVANCED MATERIALS
- Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors
- (2013) Song-Lin Li et al. NANO LETTERS
- Synthesis of MoS2 and MoSe2 Films with Vertically Aligned Layers
- (2013) Desheng Kong et al. NANO LETTERS
- Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide
- (2013) Arend M. van der Zande et al. NATURE MATERIALS
- Mobility engineering and a metal–insulator transition in monolayer MoS2
- (2013) Branimir Radisavljevic et al. NATURE MATERIALS
- Measurement of mobility in dual-gated MoS2 transistors
- (2013) Michael S. Fuhrer et al. Nature Nanotechnology
- Atomic layer deposition of dielectrics for carbon-based electronics
- (2013) J. Kim et al. THIN SOLID FILMS
- Hysteresis in Single-Layer MoS2 Field Effect Transistors
- (2012) Dattatray J. Late et al. ACS Nano
- Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances
- (2012) APPLIED PHYSICS LETTERS
- The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition
- (2012) Han Liu et al. APPLIED PHYSICS LETTERS
- Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition
- (2012) B. Dlubak et al. APPLIED PHYSICS LETTERS
- Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization
- (2012) Yu-Chuan Lin et al. Nanoscale
- Integrated Circuits and Logic Operations Based on Single-Layer MoS2
- (2011) Branimir Radisavljevic et al. ACS Nano
- Electrical Characteristics of Molybdenum Disulfide Flakes Produced by Liquid Exfoliation
- (2011) Kangho Lee et al. ADVANCED MATERIALS
- The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2
- (2011) A. Pirkle et al. APPLIED PHYSICS LETTERS
- How Good Can Monolayer MoS2Transistors Be?
- (2011) Youngki Yoon et al. NANO LETTERS
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials
- (2011) J. N. Coleman et al. SCIENCE
- On the Origin of Hole Valence Band Injection on GIFBE in PD SOI n-MOSFETs
- (2010) Chih-Hao Dai et al. IEEE ELECTRON DEVICE LETTERS
- Controllable N-Doping of Graphene
- (2010) Beidou Guo et al. NANO LETTERS
- Emerging Photoluminescence in Monolayer MoS2
- (2010) Andrea Splendiani et al. NANO LETTERS
- Degradation pattern of SnO2nanowire field effect transistors
- (2010) Junhong Na et al. NANOTECHNOLOGY
- Atomically ThinMoS2: A New Direct-Gap Semiconductor
- (2010) Kin Fai Mak et al. PHYSICAL REVIEW LETTERS
- Atomic Layer Deposition: An Overview
- (2009) Steven M. George CHEMICAL REVIEWS
- Atomic Layer Deposition of Aluminum Oxide on Carboxylic Acid-Terminated Self-Assembled Monolayers
- (2009) Meng Li et al. LANGMUIR
- Synthesis of N-Doped Graphene by Chemical Vapor Deposition and Its Electrical Properties
- (2009) Dacheng Wei et al. NANO LETTERS
- “Hump” characteristics and edge effects in polysilicon thin film transistors
- (2008) A. Valletta et al. JOURNAL OF APPLIED PHYSICS
- Atomic Layer Deposition of Metal Oxides on Pristine and Functionalized Graphene
- (2008) Xinran Wang et al. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
- Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors
- (2008) X. Li et al. SCIENCE
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