Thickness-dependent Schottky barrier height of MoS2 field-effect transistors
Published 2017 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Thickness-dependent Schottky barrier height of MoS2 field-effect transistors
Authors
Keywords
-
Journal
Nanoscale
Volume 9, Issue 18, Pages 6151-6157
Publisher
Royal Society of Chemistry (RSC)
Online
2017-04-12
DOI
10.1039/c7nr01501a
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- High Mobility MoS2Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer
- (2016) Jingli Wang et al. ADVANCED MATERIALS
- Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors
- (2016) Hsun-Jen Chuang et al. NANO LETTERS
- Thickness-dependent charge transport in few-layer MoS2field-effect transistors
- (2016) Ming-Wei Lin et al. NANOTECHNOLOGY
- Impact of Contact on the Operation and Performance of Back-Gated Monolayer MoS2 Field-Effect-Transistors
- (2015) Wei Liu et al. ACS Nano
- Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation
- (2015) Amritesh Rai et al. NANO LETTERS
- Electrical contacts to two-dimensional semiconductors
- (2015) Adrien Allain et al. NATURE MATERIALS
- Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
- (2015) Xu Cui et al. Nature Nanotechnology
- Study on the Resistance Distribution at the Contact between Molybdenum Disulfide and Metals
- (2014) Yao Guo et al. ACS Nano
- High-performance MoS2 transistors with low-resistance molybdenum contacts
- (2014) Jiahao Kang et al. APPLIED PHYSICS LETTERS
- The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS2 Interfaces
- (2014) Cheng Gong et al. NANO LETTERS
- Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics
- (2014) Wenzhuo Wu et al. NATURE
- Phase-engineered low-resistance contacts for ultrathin MoS2 transistors
- (2014) Rajesh Kappera et al. NATURE MATERIALS
- Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: An Insight into Current Flow across Schottky Barriers
- (2013) Han Liu et al. ACS Nano
- Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
- (2013) Gwan-Hyoung Lee et al. ACS Nano
- High-Performance Molybdenum Disulfide Field-Effect Transistors with Spin Tunnel Contacts
- (2013) André Dankert et al. ACS Nano
- High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects
- (2013) Wenzhong Bao et al. APPLIED PHYSICS LETTERS
- Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2
- (2013) Britton W. H. Baugher et al. NANO LETTERS
- High-Strength Chemical-Vapor-Deposited Graphene and Grain Boundaries
- (2013) G.-H. Lee et al. SCIENCE
- Channel Length Scaling of MoS2 MOSFETs
- (2012) Han Liu et al. ACS Nano
- High Performance Multilayer MoS2 Transistors with Scandium Contacts
- (2012) Saptarshi Das et al. NANO LETTERS
- Tightly bound trions in monolayer MoS2
- (2012) Kin Fai Mak et al. NATURE MATERIALS
- High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
- (2012) Sunkook Kim et al. Nature Communications
- Single-Layer MoS2 Phototransistors
- (2011) Zongyou Yin et al. ACS Nano
- Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature
- (2011) Alexander S. Mayorov et al. NANO LETTERS
- Thermal properties of graphene and nanostructured carbon materials
- (2011) Alexander A. Balandin NATURE MATERIALS
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Band-gap transition induced by interlayer van der Waals interaction in MoS2
- (2011) S. W. Han et al. PHYSICAL REVIEW B
- Anomalous Lattice Vibrations of Single- and Few-Layer MoS2
- (2010) Changgu Lee et al. ACS Nano
- Emerging Photoluminescence in Monolayer MoS2
- (2010) Andrea Splendiani et al. NANO LETTERS
- Atomically ThinMoS2: A New Direct-Gap Semiconductor
- (2010) Kin Fai Mak et al. PHYSICAL REVIEW LETTERS
- The electronic properties of graphene
- (2009) A. H. Castro Neto et al. REVIEWS OF MODERN PHYSICS
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationPublish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn More