On the Origin of Hole Valence Band Injection on GIFBE in PD SOI n-MOSFETs

Published 2010 View Full Article

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Title
On the Origin of Hole Valence Band Injection on GIFBE in PD SOI n-MOSFETs
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 6, Pages 540-542
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2010-05-01
DOI
10.1109/led.2010.2046131

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