Perspectives on future directions in III-N semiconductor research

Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy

(2013) Neeraj Nepal et al.   CRYSTAL GROWTH & DESIGN

Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers

(2012) Casey Holder et al.   Applied Physics Express

High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

(2012) Xinqiang Wang et al.   Applied Physics Express

Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN

(2012) Brendan Gunning et al.   APPLIED PHYSICS LETTERS

A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

(2012) Raymond S. Pengelly et al.   IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

Si Doping of GaN in Hydride Vapor-Phase Epitaxy

(2012) E. Richter et al.   JOURNAL OF ELECTRONIC MATERIALS

Selective chemical etch of gallium nitride by phosphoric acid

(2012) Chongmin Lee et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

III-Nitride Optoelectronic Devices: From Ultraviolet Toward Terahertz

(2012) M Razeghi   IEEE Photonics Journal

Development of periodically oriented gallium nitride for non-linear optics [Invited]

(2012) Jennifer Hite et al.   Optical Materials Express

Transparency of GaN substrates in the mid-infrared spectral range

(2011) M. Welna et al.   CRYSTAL RESEARCH AND TECHNOLOGY

Epitaxial growth of InN film on intermediate oxide buffer layer by RF-MOMBE

(2011) Shou-Yi Kuo et al.   DIAMOND AND RELATED MATERIALS

Polarization and Space-Charge-Limited Current in III-Nitride Heterostructure Nanowires

(2011) Michael A. Mastro et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition

(2011) Mustafa Alevli et al.   JOURNAL OF CRYSTAL GROWTH

GaN vertical and lateral polarity heterostructures on GaN substrates

(2011) J.K. Hite et al.   JOURNAL OF CRYSTAL GROWTH

Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN

(2011) B.N. Feigelson et al.   JOURNAL OF CRYSTAL GROWTH

Atomic layer deposition of GaN at low temperatures

(2011) Cagla Ozgit et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Group III-nitride lasers: a materials perspective

(2011) Matthew T. Hardy et al.   Materials Today

Semipolar III Nitride Semiconductors: Crystal Growth, Device Fabrication, and Optical Anisotropy

(2011) Mitsuru Funato et al.   MRS BULLETIN

Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPE

(2011) Kenji Fujito et al.   MRS BULLETIN

Current Status of GaN-Based Solid-State Lighting

(2011) Shuji Nakamura   MRS BULLETIN

Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes

(2011) Daniel F. Feezell et al.   MRS BULLETIN

Initiating polarity inversion in GaN growth using an AlN interlayer

(2011) Jennifer K. Hite et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Ammonothermal GaN substrates: Growth accomplishments and applications

(2011) Robert Dwiliński et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Evolution of phase separation in In-rich InGaN alloys

(2010) B. N. Pantha et al.   APPLIED PHYSICS LETTERS

Accurate measurement of quadratic nonlinear-optical coefficients of gallium nitride

(2010) Makoto Abe et al.   JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS

Polarization fields in III-nitride nanowire devices

(2010) Michael A Mastro et al.   NANOTECHNOLOGY

Growth mechanism of GaN nanowires: preferred nucleation site and effect of hydrogen

(2010) Sung K Lim et al.   NANOTECHNOLOGY

Controlling the conductivity of InN

(2010) C. G. Van de Walle et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

GaN Power Transistors on Si Substrates for Switching Applications

(2010) Nariaki Ikeda et al.   PROCEEDINGS OF THE IEEE

Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures

(2010) J. Simon et al.   SCIENCE

Lateral Polarity Control in GaN Based on Selective Growth Procedure Using Carbon Mask Layers

(2009) Hisashi Matsumura et al.   Applied Physics Express

Atomic Layer Deposition: An Overview

(2009) Steven M. George   CHEMICAL REVIEWS

12 GHz $F_{\rm MAX}$GaN/AlN/AlGaN Nanowire MISFET

(2009) S. Vandenbrouck et al.   IEEE ELECTRON DEVICE LETTERS

GaN Substrates—Progress, Status, and Prospects

(2009) T. Paskova et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

When group-III nitrides go infrared: New properties and perspectives

(2009) Junqiao Wu   JOURNAL OF APPLIED PHYSICS

Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition

(2009) S. Mita et al.   JOURNAL OF CRYSTAL GROWTH

Atomic layer deposition of GaN using GaCl3 and NH3

(2009) Oh Hyun Kim et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Coaxial Group III−Nitride Nanowire Photovoltaics

(2009) Yajie Dong et al.   NANO LETTERS

High-pressure structural and electronic properties of InN

(2009) Wenxia Feng et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Silicon Carbide as a Platform for Power Electronics

(2009) C. R. Eddy et al.   SCIENCE

Sources of unintentional conductivity in InN

(2008) Anderson Janotti et al.   APPLIED PHYSICS LETTERS

A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz

(2008) Yifeng Wu et al.   IEEE ELECTRON DEVICE LETTERS

Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition

(2008) S. Mita et al.   JOURNAL OF APPLIED PHYSICS

Surface depletion effects in semiconducting nanowires

(2008) B. S. Simpkins et al.   JOURNAL OF APPLIED PHYSICS

The role of collisions in the aligned growth of vertical nanowires

(2008) Qiming Li et al.   JOURNAL OF CRYSTAL GROWTH

Light-emitting diode development on polar and non-polar GaN substrates

(2008) C. Wetzel et al.   JOURNAL OF CRYSTAL GROWTH

Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers

(2008) Fang Qian et al.   NATURE MATERIALS

Strain relaxation and band-gap tunability in ternaryInxGa1−xNnanowires

(2008) H. J. Xiang et al.   PHYSICAL REVIEW B