Semipolar III Nitride Semiconductors: Crystal Growth, Device Fabrication, and Optical Anisotropy

Demonstration of 426 nm InGaN/GaN Laser Diodes Fabricated on Free-Standing Semipolar (11\bar22) Gallium Nitride Substrates

(2008) Hirokuni Asamizu et al.   Applied Physics Express

Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11\bar22) InGaN Multiple Quantum Well Laser Diode Structures

(2008) Anurag Tyagi et al.   Applied Physics Express

Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting

(2008) Mitsuru Funato et al.   Applied Physics Express

Optical polarization characteristics of InGaN∕GaN light-emitting diodes fabricated on GaN substrates oriented between (101¯0) and (101¯1¯) planes

(2008) Hisashi Masui et al.   APPLIED PHYSICS LETTERS

Improved characteristics and issues of m-plane InGaN films grown on low defect density m-plane freestanding GaN substrates by metalorganic vapor phase epitaxy

(2008) S. F. Chichibu et al.   APPLIED PHYSICS LETTERS

Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates

(2008) Hitoshi Sato et al.   APPLIED PHYSICS LETTERS

Emission color tunable light-emitting diodes composed of InGaN multifacet quantum wells

(2008) M. Funato et al.   APPLIED PHYSICS LETTERS

Excitonic properties of polar, semipolar, and nonpolar InGaN∕GaN strained quantum wells with potential fluctuations

(2008) M. Funato et al.   JOURNAL OF APPLIED PHYSICS

High-quality nonpolarm-plane GaN substrates grown by HVPE

(2008) Kenji Fujito et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Polarization switching phenomena in semipolarInxGa1−xN/GaNquantum well active layers

(2008) M. Ueda et al.   PHYSICAL REVIEW B