Selective chemical etch of gallium nitride by phosphoric acid

High internal and external quantum efficiency InGaN/GaN solar cells

(2011) Elison Matioli et al.   APPLIED PHYSICS LETTERS

GaN vertical and lateral polarity heterostructures on GaN substrates

(2011) J.K. Hite et al.   JOURNAL OF CRYSTAL GROWTH

Chemical Etch Characteristics of N-Face and Ga-Face GaN by Phosphoric Acid and Potassium Hydroxide Solutions

(2011) Younghun Jung et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Initiating polarity inversion in GaN growth using an AlN interlayer

(2011) Jennifer K. Hite et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Enhanced light extraction of nonpolar a-plane (11-20) GaN light emitting diodes on sapphire substrates by photo-enhanced chemical wet etching

(2010) Younghun Jung et al.   OPTICS EXPRESS

Fabrication of dodecagonal pyramid on nitrogen face GaN and its effect on the light extraction

(2010) ShengLi Qi et al.   Science China-Technological Sciences

Study on the formation of dodecagonal pyramid on nitrogen polar GaN surface etched by hot H3PO4

(2009) S. L. Qi et al.   APPLIED PHYSICS LETTERS

Photoelectrochemical etching of p-type GaN heterostructures

(2009) Adele C. Tamboli et al.   APPLIED PHYSICS LETTERS