Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN

Mg doping of GaN by molecular beam epitaxy

(2011) R R Lieten et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions

(2010) Meng Zhang et al.   APPLIED PHYSICS LETTERS

Mg doping of InGaN layers grown by PA-MBE for the fabrication of Schottky barrier photodiodes

(2010) J Pereiro et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes

(2009) X. Li et al.   APPLIED PHYSICS LETTERS

Transient atomic behavior and surface kinetics of GaN

(2009) Michael Moseley et al.   JOURNAL OF APPLIED PHYSICS

Metal modulation epitaxy growth for extremely high hole concentrations above 1019cm−3 in GaN

(2008) Gon Namkoong et al.   APPLIED PHYSICS LETTERS

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

(2008) Jinqiao Xie et al.   APPLIED PHYSICS LETTERS

Effect of growth conditions on the conductivity of Mg doped p-type GaN by Molecular Beam Epitaxy

(2008) John Simon et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE