Polarization fields in III-nitride nanowire devices

Semipolar III Nitride Semiconductors: Crystal Growth, Device Fabrication, and Optical Anisotropy

(2011) Mitsuru Funato et al.   MRS BULLETIN

Current Status of GaN-Based Solid-State Lighting

(2011) Shuji Nakamura   MRS BULLETIN

Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes

(2011) Daniel F. Feezell et al.   MRS BULLETIN

12 GHz $F_{\rm MAX}$GaN/AlN/AlGaN Nanowire MISFET

(2009) S. Vandenbrouck et al.   IEEE ELECTRON DEVICE LETTERS

Coaxial Group III−Nitride Nanowire Photovoltaics

(2009) Yajie Dong et al.   NANO LETTERS

Surface depletion effects in semiconducting nanowires

(2008) B. S. Simpkins et al.   JOURNAL OF APPLIED PHYSICS

The role of collisions in the aligned growth of vertical nanowires

(2008) Qiming Li et al.   JOURNAL OF CRYSTAL GROWTH

Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers

(2008) Fang Qian et al.   NATURE MATERIALS

Strain relaxation and band-gap tunability in ternaryInxGa1−xNnanowires

(2008) H. J. Xiang et al.   PHYSICAL REVIEW B