Control of Schottky barrier heights by inserting thin dielectric layers

A unified model for insulator selection to form ultra-low resistivity metal-insulator-semiconductor contacts to n-Si, n-Ge, and n-InGaAs

(2012) Ashish Agrawal et al.   APPLIED PHYSICS LETTERS

On the alleviation of Fermi-level pinning by ultrathin insulator layers in Schottky contacts

(2012) Winfried Mönch   JOURNAL OF APPLIED PHYSICS

Metal/III-V effective barrier height tuning using atomic layer deposition of high-κ/high-κ bilayer interfaces

(2011) Jenny Hu et al.   APPLIED PHYSICS LETTERS

Increase in current density for metal contacts to n-germanium by inserting TiO2 interfacial layer to reduce Schottky barrier height

(2011) J.-Y. Jason Lin et al.   APPLIED PHYSICS LETTERS

Mechanisms of Schottky Barrier Control on n-Type Germanium Using Ge3N4 Interlayers

(2011) R. R. Lieten et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Shifting Schottky barrier heights with ultra-thin dielectric layers

(2011) L. Lin et al.   MICROELECTRONIC ENGINEERING

Limits to doping in oxides

(2011) J. Robertson et al.   PHYSICAL REVIEW B

Schottky and tunneling behavior of Fe/MgO/Ge(100) structures

(2010) J.-B. Laloë et al.   APPLIED PHYSICS LETTERS

Oxygen vacancy levels and electron transport in Al2O3

(2010) D. Liu et al.   APPLIED PHYSICS LETTERS

Specific Contact Resistivity of Tunnel Barrier Contacts Used for Fermi Level Depinning

(2010) Arunanshu M. Roy et al.   IEEE ELECTRON DEVICE LETTERS

Metal/III-V Schottky barrier height tuning for the design of nonalloyed III-V field-effect transistor source/drain contacts

(2010) Jenny Hu et al.   JOURNAL OF APPLIED PHYSICS

Electronic and atomic structure of metal-HfO2interfaces

(2010) K. Y. Tse et al.   PHYSICAL REVIEW B

Atomic mechanism of flat-band voltage shifts by La2O3 and Al2O3 in gate stacks

(2009) L. Lin et al.   APPLIED PHYSICS LETTERS

Engineering of tunnel junctions for prospective spin injection in germanium

(2009) Yi Zhou et al.   APPLIED PHYSICS LETTERS

Origin of electric dipoles formed at high-k/SiO2 interface

(2009) Koji Kita et al.   APPLIED PHYSICS LETTERS

Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application

(2009) Masaharu Kobayashi et al.   JOURNAL OF APPLIED PHYSICS

A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film

(2008) Tomonori Nishimura et al.   Applied Physics Express

Alleviation of Fermi-level pinning effect on metal/germanium interface by insertion of an ultrathin aluminum oxide

(2008) Yi Zhou et al.   APPLIED PHYSICS LETTERS

Ohmic contact formation on n-type Ge

(2008) R. R. Lieten et al.   APPLIED PHYSICS LETTERS