Ambiguity in the magnitude and direction of the derived interface dipole in lanthanum aluminate heterostructures: Implications and proposed solution

Complete band offset characterization of the HfO2/SiO2/Si stack using charge corrected x-ray photoelectron spectroscopy

(2010) E. Bersch et al.   JOURNAL OF APPLIED PHYSICS

Thermal Stability Improvement of the Lanthanum Aluminate/Silicon Interface Using a Thin Yttrium Interlayer

(2010) Z. Q. Liu et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Origin of electric dipoles formed at high-k/SiO2 interface

(2009) Koji Kita et al.   APPLIED PHYSICS LETTERS

Effects of thermal annealing on the band alignment of lanthanum aluminate on silicon investigated by x-ray photoelectron spectroscopy

(2009) Z. Q. Liu et al.   JOURNAL OF APPLIED PHYSICS

Erratum: “Band alignment of yttrium oxide on various relaxed and strained semiconductor substrates” [J. Appl. Phys. 103, 083702 (2008)]

(2009) S. Y. Chiam et al.   JOURNAL OF APPLIED PHYSICS

Impact of a γ-Al[sub 2]O[sub 3](001) barrier on LaAlO[sub 3] metal-oxide-semiconductor capacitor electrical properties

(2009) L. Becerra et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Band offsets and work function control in field effect transistors

(2009) John Robertson   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Compact plasma source for removal of hydrocarbons for surface analysis

(2009) Catherine A. Dukes et al.   SURFACE AND INTERFACE ANALYSIS

Band offsets of ultrathin high-κoxide films with Si

(2008) Eric Bersch et al.   PHYSICAL REVIEW B