Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN
Published 2011 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN
Authors
Keywords
-
Journal
JOURNAL OF CHEMICAL PHYSICS
Volume 134, Issue 8, Pages 084703
Publisher
AIP Publishing
Online
2011-02-26
DOI
10.1063/1.3548872
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Limitations to band gap tuning in nitride semiconductor alloys
- (2010) I. Gorczyca et al. APPLIED PHYSICS LETTERS
- Band bowing and band alignment in InGaN alloys
- (2010) Poul Georg Moses et al. APPLIED PHYSICS LETTERS
- Effects of surface reconstructions on oxygen adsorption at AlN polar surfaces
- (2010) M. S. Miao et al. EPL
- InGaN/GaN multiple quantum well solar cells with long operating wavelengths
- (2009) R. Dahal et al. APPLIED PHYSICS LETTERS
- Erratum: “A scheme for measuring vibrational frequency and coupling strength in a coupled nanomechanical resonator-quantum dot system” [Appl. Phys. Lett. 94, 063116 (2009)]
- (2009) Jin-Jin Li et al. APPLIED PHYSICS LETTERS
- Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN
- (2009) Qimin Yan et al. APPLIED PHYSICS LETTERS
- Contactless electroreflectance of InGaN layers with indium content ≤36%: The surface band bending, band gap bowing, and Stokes shift issues
- (2009) R. Kudrawiec et al. JOURNAL OF APPLIED PHYSICS
- Optical, structural investigations and band-gap bowing parameter of GaInN alloys
- (2009) M. Moret et al. JOURNAL OF CRYSTAL GROWTH
- Band-structure and optical-transition parameters of wurtzite MgO, ZnO, and CdO from quasiparticle calculations
- (2009) A. Schleife et al. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- Reconstructions and origin of surface states on AlN polar and nonpolar surfaces
- (2009) M. S. Miao et al. PHYSICAL REVIEW B
- Hybrid density functional calculations of the band gap ofGaxIn1−xN
- (2009) Xifan Wu et al. PHYSICAL REVIEW B
- Influence of indium clustering on the band structure of semiconducting ternary and quaternary nitride alloys
- (2009) I. Gorczyca et al. PHYSICAL REVIEW B
- Cross-sectional scanning photoelectron microscopy and spectroscopy of wurtzite InN∕GaN heterojunction: Measurement of “intrinsic” band lineup
- (2008) Chung-Lin Wu et al. APPLIED PHYSICS LETTERS
- High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap
- (2008) Carl J. Neufeld et al. APPLIED PHYSICS LETTERS
- High-quality InGaN∕GaN heterojunctions and their photovoltaic effects
- (2008) Xinhe Zheng et al. APPLIED PHYSICS LETTERS
- Direct hydrogen gas generation by using InGaN epilayers as working electrodes
- (2008) J. Li et al. APPLIED PHYSICS LETTERS
- Modeling the electrified solid–liquid interface
- (2008) Jan Rossmeisl et al. CHEMICAL PHYSICS LETTERS
- Bowing of the band gap pressure coefficient in InxGa1−xN alloys
- (2008) G. Franssen et al. JOURNAL OF APPLIED PHYSICS
- InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements
- (2008) P. D. C. King et al. PHYSICAL REVIEW B
- Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
- (2008) Patrick Rinke et al. PHYSICAL REVIEW B
- Band Offsets at theSi/SiO2Interface from Many-Body Perturbation Theory
- (2008) R. Shaltaf et al. PHYSICAL REVIEW LETTERS
Find the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
SearchCreate your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create Now