Energy-band parameters of atomic layer deposited Al2O3 and HfO2 on InxGa1−xAs

Title
Energy-band parameters of atomic layer deposited Al2O3 and HfO2 on InxGa1−xAs
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 5, Pages 052106
Publisher
AIP Publishing
Online
2009-02-04
DOI
10.1063/1.3078399

Ask authors/readers for more resources

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now