Schottky barrier at the AlN/metal junction

Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN

(2011) Poul Georg Moses et al.   JOURNAL OF CHEMICAL PHYSICS

Band offsets in cubic GaN/AlN superlattices

(2011) C. Mietze et al.   PHYSICAL REVIEW B

Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures

(2010) D.A. Deen et al.   SOLID-STATE ELECTRONICS

Dielectric function of zinc-blende AlN from 1 to 20 eV: Band gap and van Hove singularities

(2009) M. Röppischer et al.   JOURNAL OF APPLIED PHYSICS

The charge neutrality level and the fermi level pinning in A3N (BN, AlN, GaN, InN) nitrides

(2009) V. N. Brudnyi et al.   Russian Physics Journal

Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

(2008) A. M. Dabiran et al.   APPLIED PHYSICS LETTERS

BARRIER HEIGHT ENHANCED GaN SCHOTTKY DIODES USING A THIN AlN SURFACE LAYER

(2008) L. S. CHUAH et al.   INTERNATIONAL JOURNAL OF MODERN PHYSICS B

Ab-initio study of AlN in zinc-blende and rock-salt phases

(2008) U.P. Verma et al.   SOLID STATE SCIENCES