Atomic Layer Deposition of Al-Doped ZrO2Thin Films as Gate Dielectric for In0.53Ga0.47As

Improved Performance of In$_{0.53}$Ga$_{0.47}$As-Based Metal–Oxide–Semiconductor Capacitors with Al:ZrO$_{2}$ Gate Dielectric Grown by Atomic Layer Deposition

(2011) Alessandro Molle et al.   Applied Physics Express

Reconstruction dependent reactivity of As-decapped In0.53Ga0.47As(001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition

(2011) A. Molle et al.   APPLIED PHYSICS LETTERS

Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials

(2011) M. Heyns et al.   MRS BULLETIN

Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors

(2011) Robert M. Wallace et al.   MRS BULLETIN

Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals

(2010) Eun Ji Kim et al.   APPLIED PHYSICS LETTERS

Reliability of Al2O3-doped ZrO2 high-k dielectrics in three-dimensional stacked metal-insulator-metal capacitors

(2010) Dayu Zhou et al.   JOURNAL OF APPLIED PHYSICS

Effects of surface passivation during atomic layer deposition of Al2O3 on In0.53Ga0.47As substrates

(2010) L. Lamagna et al.   MICROELECTRONIC ENGINEERING

Characterization of the “clean-up” of the oxidized Ge(100) surface by atomic layer deposition

(2009) M. Milojevic et al.   APPLIED PHYSICS LETTERS

Metal-oxide-semiconductor capacitors with ZrO2 dielectrics grown on In0.53Ga0.47As by chemical beam deposition

(2009) Roman Engel-Herbert et al.   APPLIED PHYSICS LETTERS

Influence of the amorphous/crystalline phase of Zr1−xAlxO2 high-k layers on the capacitance performance of metal insulator metal stacks

(2009) Albena Paskaleva et al.   JOURNAL OF APPLIED PHYSICS

Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition

(2009) R. D. Long et al.   JOURNAL OF APPLIED PHYSICS

In situspectroscopic ellipsometry as a versatile tool for studying atomic layer deposition

(2009) E Langereis et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Chemical and physical interface studies of the atomic-layer-deposited Al2O3 on GaAs substrates

(2008) D. Shahrjerdi et al.   APPLIED PHYSICS LETTERS

Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces

(2008) M. Milojevic et al.   APPLIED PHYSICS LETTERS

GaAs interfacial self-cleaning by atomic layer deposition

(2008) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS