Improved Performance of In$_{0.53}$Ga$_{0.47}$As-Based Metal–Oxide–Semiconductor Capacitors with Al:ZrO$_{2}$ Gate Dielectric Grown by Atomic Layer Deposition

Influence of trimethylaluminum on the growth and properties of HfO2/In0.53Ga0.47As interfaces

(2011) Yoontae Hwang et al.   APPLIED PHYSICS LETTERS

Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials

(2011) M. Heyns et al.   MRS BULLETIN

Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer

(2010) A. O’Mahony et al.   APPLIED PHYSICS LETTERS

Dangling bond charge transition levels in AlAs, GaAs, and InAs

(2010) Hannu-Pekka Komsa et al.   APPLIED PHYSICS LETTERS

Analysis of trap state densities at HfO2/In0.53Ga0.47As interfaces

(2010) Yoontae Hwang et al.   APPLIED PHYSICS LETTERS

Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals

(2010) Eun Ji Kim et al.   APPLIED PHYSICS LETTERS

The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor

(2010) H. D. Trinh et al.   APPLIED PHYSICS LETTERS

Atomic imaging of the monolayer nucleation and unpinning of a compound semiconductor surface during atomic layer deposition

(2010) Jonathon B. Clemens et al.   JOURNAL OF CHEMICAL PHYSICS

Thermally induced permittivity enhancement in La-doped ZrO2 grown by atomic layer deposition on Ge(100)

(2009) L. Lamagna et al.   APPLIED PHYSICS LETTERS

Ge-based interface passivation for atomic layer deposited La-doped ZrO2 on III-V compound (GaAs,In0.15Ga0.85As) substrates

(2009) Alessandro Molle et al.   APPLIED PHYSICS LETTERS

Investigation of interfacial layer development between thin Al2O3 films grown using atomic layer deposition and Si(100), Ge(100), or GaAs(100)

(2009) L. Lamagna et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator

(2009) Han-Chung Lin et al.   MICROELECTRONIC ENGINEERING

In0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm

(2008) S. Koveshnikov et al.   APPLIED PHYSICS LETTERS

GaAs interfacial self-cleaning by atomic layer deposition

(2008) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS