Characterization of the “clean-up” of the oxidized Ge(100) surface by atomic layer deposition

Hafnium oxide/germanium oxynitride gate stacks on germanium: Capacitance scaling and interface state density

(2009) Yasuhiro Oshima et al.   APPLIED PHYSICS LETTERS

Oxidant prepulsing of Ge (100) prior to atomic layer deposition of Al2O3: In situ surface characterization

(2009) Shankar Swaminathan et al.   APPLIED PHYSICS LETTERS

Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4)2S passivated GaAs(100) surfaces

(2008) M. Milojevic et al.   APPLIED PHYSICS LETTERS

Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces

(2008) M. Milojevic et al.   APPLIED PHYSICS LETTERS

GaAs interfacial self-cleaning by atomic layer deposition

(2008) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

Chemical Bonding, Interfaces, and Defects in Hafnium Oxide∕Germanium Oxynitride Gate Stacks on Ge(100)

(2008) Yasuhiro Oshima et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY