Atomic Layer Deposition of Al-Doped ZrO2Thin Films as Gate Dielectric for In0.53Ga0.47As
出版年份 2011 全文链接
标题
Atomic Layer Deposition of Al-Doped ZrO2Thin Films as Gate Dielectric for In0.53Ga0.47As
作者
关键词
-
出版物
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume 159, Issue 3, Pages H220-H224
出版商
The Electrochemical Society
发表日期
2011-12-31
DOI
10.1149/2.034203jes
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Improved Performance of In$_{0.53}$Ga$_{0.47}$As-Based Metal–Oxide–Semiconductor Capacitors with Al:ZrO$_{2}$ Gate Dielectric Grown by Atomic Layer Deposition
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- Reconstruction dependent reactivity of As-decapped In0.53Ga0.47As(001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition
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- Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials
- (2011) M. Heyns et al. MRS BULLETIN
- Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors
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- Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals
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- Reliability of Al2O3-doped ZrO2 high-k dielectrics in three-dimensional stacked metal-insulator-metal capacitors
- (2010) Dayu Zhou et al. JOURNAL OF APPLIED PHYSICS
- Effects of surface passivation during atomic layer deposition of Al2O3 on In0.53Ga0.47As substrates
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- (2009) M. Milojevic et al. APPLIED PHYSICS LETTERS
- Metal-oxide-semiconductor capacitors with ZrO2 dielectrics grown on In0.53Ga0.47As by chemical beam deposition
- (2009) Roman Engel-Herbert et al. APPLIED PHYSICS LETTERS
- Influence of the amorphous/crystalline phase of Zr1−xAlxO2 high-k layers on the capacitance performance of metal insulator metal stacks
- (2009) Albena Paskaleva et al. JOURNAL OF APPLIED PHYSICS
- Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition
- (2009) R. D. Long et al. JOURNAL OF APPLIED PHYSICS
- In situspectroscopic ellipsometry as a versatile tool for studying atomic layer deposition
- (2009) E Langereis et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Chemical and physical interface studies of the atomic-layer-deposited Al2O3 on GaAs substrates
- (2008) D. Shahrjerdi et al. APPLIED PHYSICS LETTERS
- Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces
- (2008) M. Milojevic et al. APPLIED PHYSICS LETTERS
- GaAs interfacial self-cleaning by atomic layer deposition
- (2008) C. L. Hinkle et al. APPLIED PHYSICS LETTERS
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