Reconstruction dependent reactivity of As-decapped In0.53Ga0.47As(001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition

Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer

(2010) A. O’Mahony et al.   APPLIED PHYSICS LETTERS

An in situ examination of atomic layer deposited alumina/InAs(100) interfaces

(2010) A. P. Kirk et al.   APPLIED PHYSICS LETTERS

Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals

(2010) Eun Ji Kim et al.   APPLIED PHYSICS LETTERS

Arsenic decapping and half cycle reactions during atomic layer deposition of Al2O3 on In0.53Ga0.47As(001)

(2010) Byungha Shin et al.   APPLIED PHYSICS LETTERS

The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor

(2010) H. D. Trinh et al.   APPLIED PHYSICS LETTERS

Effective reduction of interfacial traps in Al2O3/GaAs (001) gate stacks using surface engineering and thermal annealing

(2010) Y. C. Chang et al.   APPLIED PHYSICS LETTERS

Effects of surface passivation during atomic layer deposition of Al2O3 on In0.53Ga0.47As substrates

(2010) L. Lamagna et al.   MICROELECTRONIC ENGINEERING

Metal-oxide-semiconductor capacitors with erbium oxide dielectrics on In0.53Ga0.47As channels

(2009) Yoontae Hwang et al.   APPLIED PHYSICS LETTERS

Model of interface states at III-V oxide interfaces

(2009) John Robertson   APPLIED PHYSICS LETTERS

Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

(2009) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

Ge-based interface passivation for atomic layer deposited La-doped ZrO2 on III-V compound (GaAs,In0.15Ga0.85As) substrates

(2009) Alessandro Molle et al.   APPLIED PHYSICS LETTERS

Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator

(2009) Han-Chung Lin et al.   MICROELECTRONIC ENGINEERING

Initial stages of the autocatalytic oxidation of the InAs(001)-(4×2)/c(8×2) surface by molecular oxygen

(2009) Jonathon B. Clemens et al.   SURFACE SCIENCE

Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces

(2008) M. Milojevic et al.   APPLIED PHYSICS LETTERS

Main determinants for III–V metal-oxide-semiconductor field-effect transistors (invited)

(2008) Peide D. Ye   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A