Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties

Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities

(2013) Varistha Chobpattana et al.   APPLIED PHYSICS LETTERS

Components of channel capacitance in metal-insulator-semiconductor capacitors

(2013) Alex J. Grede et al.   JOURNAL OF APPLIED PHYSICS

Passivation of In0.53Ga0.47As/ZrO2 interfaces by AlN atomic layer deposition process

(2013) C. Weiland et al.   JOURNAL OF APPLIED PHYSICS

Chemical and electrical characterization of the HfO2/InAlAs interface

(2013) B. Brennan et al.   JOURNAL OF APPLIED PHYSICS

Electrically active interface defects in the In0.53Ga0.47As MOS system

(2013) V. Djara et al.   MICROELECTRONIC ENGINEERING

Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors

(2012) M. El Kazzi et al.   APPLIED PHYSICS LETTERS

Experimental evidence for the correlation between the weak inversion hump and near midgap states in dielectric/InGaAs interfaces

(2012) Igor Krylov et al.   APPLIED PHYSICS LETTERS

Frequency dispersion in III-V metal-oxide-semiconductor capacitors

(2012) Susanne Stemmer et al.   APPLIED PHYSICS LETTERS

1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density

(2012) R. Suzuki et al.   APPLIED PHYSICS LETTERS

Quantification of interfacial state density (Dit) at the high-k/III-V interface based on Hall effect measurements

(2012) D. Veksler et al.   JOURNAL OF APPLIED PHYSICS

Atomic imaging of atomic layer deposition oxide nucleation with trimethylaluminum on As-rich InGaAs(001) 2 × 4 vs Ga/In-rich InGaAs(001) 4 × 2

(2012) Wilhelm Melitz et al.   JOURNAL OF CHEMICAL PHYSICS

Al$_{2}$O$_{3}$ Growth on (100) In$_{0.53}$Ga$_{0.47}$As Initiated by Cyclic Trimethylaluminum and Hydrogen Plasma Exposures

(2011) Andrew D. Carter et al.   Applied Physics Express

Al-doped HfO2/In0.53Ga0.47As metal-oxide-semiconductor capacitors

(2011) Yoontae Hwang et al.   APPLIED PHYSICS LETTERS

Elimination of the weak inversion hump in Si3N4/InGaAs (001) gate stacks using an in situ NH3 pre-treatment

(2011) Igor Krylov et al.   APPLIED PHYSICS LETTERS

Influence of trimethylaluminum on the growth and properties of HfO2/In0.53Ga0.47As interfaces

(2011) Yoontae Hwang et al.   APPLIED PHYSICS LETTERS

InGaAs surface preparation for atomic layer deposition by hydrogen cleaning and improvement with high temperature anneal

(2011) Wilhelm Melitz et al.   JOURNAL OF APPLIED PHYSICS

A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers

(2011) É. O’Connor et al.   JOURNAL OF APPLIED PHYSICS

Intrinsic defects in GaAs and InGaAs through hybrid functional calculations

(2011) Hannu-Pekka Komsa et al.   PHYSICA B-CONDENSED MATTER

Quantification of trap densities at dielectric/III–V semiconductor interfaces

(2010) Roman Engel-Herbert et al.   APPLIED PHYSICS LETTERS

Small-Signal Response of Inversion Layers in High-Mobility $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs Made With Thin High- $\kappa$ Dielectrics

(2010) Ashkar Ali et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Impact of Semiconductor and Interface-State Capacitance on Metal/High-k/GaAs Capacitance–Voltage Characteristics

(2010) Arif M. Sonnet et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces

(2010) Roman Engel-Herbert et al.   JOURNAL OF APPLIED PHYSICS

Atomic imaging of the monolayer nucleation and unpinning of a compound semiconductor surface during atomic layer deposition

(2010) Jonathon B. Clemens et al.   JOURNAL OF CHEMICAL PHYSICS

Impact of Interfacial Oxygen Content on Bonding, Stability, Band Offsets, and Interface States of GaAs:HfO2 Interfaces

(2010) Weichao Wang et al.   Journal of Physical Chemistry C

The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces

(2009) H. C. Lin et al.   APPLIED PHYSICS LETTERS

Atomically abrupt and unpinned Al2O3/In0.53Ga0.47As interfaces: Experiment and simulation

(2009) Eun Ji Kim et al.   JOURNAL OF APPLIED PHYSICS

In0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm

(2008) S. Koveshnikov et al.   APPLIED PHYSICS LETTERS

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

(2008) Koen Martens et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES