Quantification of trap densities at dielectric/III–V semiconductor interfaces

Analysis of trap state densities at HfO2/In0.53Ga0.47As interfaces

(2010) Yoontae Hwang et al.   APPLIED PHYSICS LETTERS

Small-Signal Response of Inversion Layers in High-Mobility $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs Made With Thin High- $\kappa$ Dielectrics

(2010) Ashkar Ali et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces

(2009) H. C. Lin et al.   APPLIED PHYSICS LETTERS

On the interface state density at In0.53Ga0.47As/oxide interfaces

(2009) G. Brammertz et al.   APPLIED PHYSICS LETTERS

Inversion capacitance-voltage studies on GaAs metal-oxide-semiconductor structure using transparent conducting oxide as metal gate

(2008) T. Yang et al.   APPLIED PHYSICS LETTERS

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

(2008) Koen Martens et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES