Atomic imaging of the monolayer nucleation and unpinning of a compound semiconductor surface during atomic layer deposition

An in situ examination of atomic layer deposited alumina/InAs(100) interfaces

(2010) A. P. Kirk et al.   APPLIED PHYSICS LETTERS

Structural and electronic properties of group III Rich In0.53Ga0.47As(001)

(2010) Jian Shen et al.   SURFACE SCIENCE

Unpinned Interface Between Al[sub 2]O[sub 3] Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In[sub 0.53]Ga[sub 0.47]As(001)

(2009) Byungha Shin et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Half-Cycle Atomic Layer Deposition Reaction Study Using O[sub 3] and H[sub 2]O Oxidation of Al[sub 2]O[sub 3] on In[sub 0.53]Ga[sub 0.47]As

(2009) B. Brennan et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

H[sub 2]O- and O[sub 3]-Based Atomic Layer Deposition of High-κ Dielectric Films on GeO[sub 2] Passivation Layers

(2009) A. Delabie et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Initial stages of the autocatalytic oxidation of the InAs(001)-(4×2)/c(8×2) surface by molecular oxygen

(2009) Jonathon B. Clemens et al.   SURFACE SCIENCE

Anomalous hybridization in the In-rich InAs(001) reconstruction

(2009) Darby L. Feldwinn et al.   SURFACE SCIENCE

Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0.53Ga0.47As and InP using physical vapor deposition HfO2 and silicon interface passivation layer

(2008) InJo Ok et al.   APPLIED PHYSICS LETTERS

In0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm

(2008) S. Koveshnikov et al.   APPLIED PHYSICS LETTERS

Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Al2O3 Dielectric

(2008) Ning Li et al.   APPLIED PHYSICS LETTERS

Achieving a low interfacial density of states in atomic layer deposited Al2O3 on In0.53Ga0.47As

(2008) H. C. Chiu et al.   APPLIED PHYSICS LETTERS

Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces

(2008) M. Milojevic et al.   APPLIED PHYSICS LETTERS

Electronic surface states on the MOVPE-prepared InGa-terminated InGaAs(100) (4×2)/c(8×2) surface

(2008) U. Seidel et al.   APPLIED SURFACE SCIENCE

High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm

(2008) Y. Xuan et al.   IEEE ELECTRON DEVICE LETTERS