Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities
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Title
Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 2, Pages 022907
Publisher
AIP Publishing
Online
2013-01-17
DOI
10.1063/1.4776656
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