Influence of trimethylaluminum on the growth and properties of HfO2/In0.53Ga0.47As interfaces

Quantification of trap densities at dielectric/III–V semiconductor interfaces

(2010) Roman Engel-Herbert et al.   APPLIED PHYSICS LETTERS

Analysis of trap state densities at HfO2/In0.53Ga0.47As interfaces

(2010) Yoontae Hwang et al.   APPLIED PHYSICS LETTERS

Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals

(2010) Eun Ji Kim et al.   APPLIED PHYSICS LETTERS

Combinatorial Discovery and Optimization of Amorphous HfO[sub 2]–Nb[sub 2]O[sub 5] Mixture with Improved Transparency

(2010) Ali Dabirian et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Effect of postdeposition anneals on the Fermi level response of HfO2/In0.53Ga0.47As gate stacks

(2010) Yoontae Hwang et al.   JOURNAL OF APPLIED PHYSICS

Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces

(2010) Roman Engel-Herbert et al.   JOURNAL OF APPLIED PHYSICS

Initiation of a passivated interface between hafnium oxide and In(Ga)As(0 0 1)−(4×2)

(2010) Jonathon B. Clemens et al.   JOURNAL OF CHEMICAL PHYSICS

Atomic imaging of the monolayer nucleation and unpinning of a compound semiconductor surface during atomic layer deposition

(2010) Jonathon B. Clemens et al.   JOURNAL OF CHEMICAL PHYSICS

The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces

(2009) H. C. Lin et al.   APPLIED PHYSICS LETTERS

Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator

(2009) Han-Chung Lin et al.   MICROELECTRONIC ENGINEERING

GaAs interfacial self-cleaning by atomic layer deposition

(2008) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS