Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices

Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory

(2008) S.-E. Ahn et al.   ADVANCED MATERIALS

Tunable work functions of platinum gate electrode on HfO2 thin films for metal-oxide-semiconductor devices

(2008) Yong-Mu Kim et al.   APPLIED PHYSICS LETTERS

Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications

(2008) Wen-Yuan Chang et al.   APPLIED PHYSICS LETTERS

Direct observation of conducting filaments on resistive switching of NiO thin films

(2008) J. Y. Son et al.   APPLIED PHYSICS LETTERS

Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$

(2008) Weihua Guan et al.   IEEE ELECTRON DEVICE LETTERS

Gd Doping Improved Resistive Switching Characteristics of TiO2-Based Resistive Memory Devices

(2008) Li-Feng Liu et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Resistance switching characteristics in Li-doped NiO

(2008) Kyooho Jung et al.   JOURNAL OF APPLIED PHYSICS

Resistance Switching Behaviors of Hafnium Oxide Films Grown by MOCVD for Nonvolatile Memory Applications

(2007) Seunghyup Lee et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY