Unipolar $\hbox{TaO}_{x}$-Based Resistive Change Memory Realized With Electrode Engineering

Published 2010 View Full Article

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Title
Unipolar $\hbox{TaO}_{x}$-Based Resistive Change Memory Realized With Electrode Engineering
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 9, Pages 966-968
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2010-07-20
DOI
10.1109/led.2010.2052091
References
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