Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in $\hbox{TiO}_{2}$ for Resistive Switching Memory

Authors

Keywords

Journal

Volume 32, Issue 2, Pages 197-199

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2010-12-22

DOI

10.1109/led.2010.2091489

References

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