Si surface passivation by Al2O3 thin films deposited using a low thermal budget atomic layer deposition process

Surface passivation for ultrathin Al2O3layers grown at low temperature by thermal atomic layer deposition

(2012) J. Frascaroli et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition

(2011) G. Dingemans et al.   JOURNAL OF APPLIED PHYSICS

Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices

(2011) J. R. Weber et al.   JOURNAL OF APPLIED PHYSICS

Electronic and chemical properties of the c-Si/Al2O3 interface

(2011) Florian Werner et al.   JOURNAL OF APPLIED PHYSICS

Deposition Temperature and Thermal Annealing Effects on the Electrical Characteristics of Atomic Layer Deposited Al2O3 Films on Silicon

(2011) J. M. Rafí et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

19.4%-efficient large-area fully screen-printed silicon solar cells

(2011) Sebastian Gatz et al.   Physica Status Solidi-Rapid Research Letters

Contact passivation in silicon solar cells using atomic-layer-deposited aluminum oxide layers

(2011) Dimitri Zielke et al.   Physica Status Solidi-Rapid Research Letters

Back-junction back-contact n-type silicon solar cells with screen-printed aluminum-alloyed emitter

(2010) Robert Bock et al.   APPLIED PHYSICS LETTERS

Role of field-effect on c-Si surface passivation by ultrathin (2–20 nm) atomic layer deposited Al2O3

(2010) N. M. Terlinden et al.   APPLIED PHYSICS LETTERS

Influence of the Deposition Temperature on the c-Si Surface Passivation by Al[sub 2]O[sub 3] Films Synthesized by ALD and PECVD

(2010) G. Dingemans et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al[sub 2]O[sub 3]

(2010) G. Dingemans et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Development status of high-efficiency HIT solar cells

(2010) Takahiro Mishima et al.   SOLAR ENERGY MATERIALS AND SOLAR CELLS

Investigation of interfacial layer development between thin Al2O3 films grown using atomic layer deposition and Si(100), Ge(100), or GaAs(100)

(2009) L. Lamagna et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

High-efficiency hydrogenated amorphous/crystalline Si heterojunction solar cells

(2009) Qi Wang   PHILOSOPHICAL MAGAZINE

Silicon surface passivation by ultrathin Al2O3films synthesized by thermal and plasma atomic layer deposition

(2009) G. Dingemans et al.   Physica Status Solidi-Rapid Research Letters

High efficiency n-type Si solar cells on Al2O3-passivated boron emitters

(2008) Jan Benick et al.   APPLIED PHYSICS LETTERS

Silicon surface passivation by atomic layer deposited Al2O3

(2008) B. Hoex et al.   JOURNAL OF APPLIED PHYSICS

Negative charge and charging dynamics in Al[sub 2]O[sub 3] films on Si characterized by second-harmonic generation

(2008) J. J. H. Gielis et al.   JOURNAL OF APPLIED PHYSICS

On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

(2008) B. Hoex et al.   JOURNAL OF APPLIED PHYSICS

Surface passivation of high-efficiency silicon solar cells by atomic-layer-deposited Al2O3

(2008) J. Schmidt et al.   PROGRESS IN PHOTOVOLTAICS