Electronic and chemical properties of the c-Si/Al2O3 interface

Interplay of amorphous silicon disorder and hydrogen content with interface defects in amorphous/crystalline silicon heterojunctions

(2010) T. F. Schulze et al.   APPLIED PHYSICS LETTERS

Influence of the Deposition Temperature on the c-Si Surface Passivation by Al[sub 2]O[sub 3] Films Synthesized by ALD and PECVD

(2010) G. Dingemans et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al[sub 2]O[sub 3]

(2010) G. Dingemans et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Effective surface passivation of crystalline silicon using ultrathin Al2O3films and Al2O3/SiNxstacks

(2009) Jan Schmidt et al.   Physica Status Solidi-Rapid Research Letters

Thermal stability of the Al2O3passivation on p-type silicon surfaces for solar cell applications

(2009) Jan Benick et al.   Physica Status Solidi-Rapid Research Letters

Silicon surface passivation by ultrathin Al2O3films synthesized by thermal and plasma atomic layer deposition

(2009) G. Dingemans et al.   Physica Status Solidi-Rapid Research Letters

On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

(2008) B. Hoex et al.   JOURNAL OF APPLIED PHYSICS

Surface passivation of high-efficiency silicon solar cells by atomic-layer-deposited Al2O3

(2008) J. Schmidt et al.   PROGRESS IN PHOTOVOLTAICS