Contact passivation in silicon solar cells using atomic-layer-deposited aluminum oxide layers

Excellent silicon surface passivation with 5 Å thin ALD Al2O3 layers: Influence of different thermal post-deposition treatments

(2011) Armin Richter et al.   Physica Status Solidi-Rapid Research Letters

Influence of the Deposition Temperature on the c-Si Surface Passivation by Al[sub 2]O[sub 3] Films Synthesized by ALD and PECVD

(2010) G. Dingemans et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

High-Efficiency c-Si Solar Cells Passivated With ALD and PECVD Aluminum Oxide

(2010) Pierre Saint-Cast et al.   IEEE ELECTRON DEVICE LETTERS

Effective surface passivation of crystalline silicon using ultrathin Al2O3films and Al2O3/SiNxstacks

(2009) Jan Schmidt et al.   Physica Status Solidi-Rapid Research Letters

On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

(2008) B. Hoex et al.   JOURNAL OF APPLIED PHYSICS

Surface passivation of high-efficiency silicon solar cells by atomic-layer-deposited Al2O3

(2008) J. Schmidt et al.   PROGRESS IN PHOTOVOLTAICS