Influence of the Deposition Temperature on the c-Si Surface Passivation by Al[sub 2]O[sub 3] Films Synthesized by ALD and PECVD

Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide

(2009) Pierre Saint-Cast et al.   APPLIED PHYSICS LETTERS

High Efficiency Silicon Solar Cells with Bilayer Passivation Structure

(2009) W. C. Sun et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystalline silicon

(2009) G. Dingemans et al.   JOURNAL OF APPLIED PHYSICS

Effective surface passivation of crystalline silicon by rf sputtered aluminum oxide

(2009) Tsu-Tsung Li et al.   Physica Status Solidi-Rapid Research Letters

Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy

(2008) E. Langereis et al.   APPLIED PHYSICS LETTERS

High efficiency n-type Si solar cells on Al2O3-passivated boron emitters

(2008) Jan Benick et al.   APPLIED PHYSICS LETTERS

Silicon surface passivation by atomic layer deposited Al2O3

(2008) B. Hoex et al.   JOURNAL OF APPLIED PHYSICS

Negative charge and charging dynamics in Al[sub 2]O[sub 3] films on Si characterized by second-harmonic generation

(2008) J. J. H. Gielis et al.   JOURNAL OF APPLIED PHYSICS

On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

(2008) B. Hoex et al.   JOURNAL OF APPLIED PHYSICS

Surface passivation of high-efficiency silicon solar cells by atomic-layer-deposited Al2O3

(2008) J. Schmidt et al.   PROGRESS IN PHOTOVOLTAICS