Investigation of interfacial layer development between thin Al2O3 films grown using atomic layer deposition and Si(100), Ge(100), or GaAs(100)

出版年份 2009 全文链接

标题

作者

关键词

出版物

Volume 27, Issue 3, Pages 443-448

出版商

American Vacuum Society

发表日期

2009-05-03

DOI

10.1116/1.3097849

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