Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition

标题
Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 110, Issue 9, Pages 093715
出版商
AIP Publishing
发表日期
2011-11-10
DOI
10.1063/1.3658246

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