Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
出版年份 2011 全文链接
标题
Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 110, Issue 9, Pages 093715
出版商
AIP Publishing
发表日期
2011-11-10
DOI
10.1063/1.3658246
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Effective passivation of Si surfaces by plasma deposited SiOx/a-SiNx:H stacks
- (2011) G. Dingemans et al. APPLIED PHYSICS LETTERS
- Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices
- (2011) J. R. Weber et al. JOURNAL OF APPLIED PHYSICS
- Characterization of Traps in the Transition Region at the HfO[sub 2]∕SiO[sub x] Interface by Thermally Stimulated Currents
- (2011) B. Raeissi et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- 19.4%-efficient large-area fully screen-printed silicon solar cells
- (2011) Sebastian Gatz et al. Physica Status Solidi-Rapid Research Letters
- Excellent silicon surface passivation with 5 Å thin ALD Al2O3 layers: Influence of different thermal post-deposition treatments
- (2011) Armin Richter et al. Physica Status Solidi-Rapid Research Letters
- Spatially separated atomic layer deposition of Al2O3, a new option for high-throughput Si solar cell passivation
- (2011) B. Vermang et al. PROGRESS IN PHOTOVOLTAICS
- High-Speed Spatial Atomic-Layer Deposition of Aluminum Oxide Layers for Solar Cell Passivation
- (2010) Paul Poodt et al. ADVANCED MATERIALS
- Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates
- (2010) Byungha Shin et al. APPLIED PHYSICS LETTERS
- Role of field-effect on c-Si surface passivation by ultrathin (2–20 nm) atomic layer deposited Al2O3
- (2010) N. M. Terlinden et al. APPLIED PHYSICS LETTERS
- Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
- (2010) G. Dingemans et al. APPLIED PHYSICS LETTERS
- Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al[sub 2]O[sub 3]
- (2010) G. Dingemans et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Interpretation of recombination at c-Si/SiNx interfaces by surface damage
- (2010) Silke Steingrube et al. JOURNAL OF APPLIED PHYSICS
- Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
- (2010) G. Dingemans et al. Physica Status Solidi-Rapid Research Letters
- High Quality Aluminum Oxide Passivation Layer for Crystalline Silicon Solar Cells Deposited by Parallel-Plate Plasma-Enhanced Chemical Vapor Deposition
- (2009) Shinsuke Miyajima et al. Applied Physics Express
- Resonant photoionization of defects in Si/SiO2/HfO2 film stacks observed by second-harmonic generation
- (2009) J. Price et al. APPLIED PHYSICS LETTERS
- Atomic mechanism of flat-band voltage shifts by La2O3 and Al2O3 in gate stacks
- (2009) L. Lin et al. APPLIED PHYSICS LETTERS
- Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide
- (2009) Pierre Saint-Cast et al. APPLIED PHYSICS LETTERS
- In situspectroscopic ellipsometry as a versatile tool for studying atomic layer deposition
- (2009) E Langereis et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Silicon surface passivation by ultrathin Al2O3films synthesized by thermal and plasma atomic layer deposition
- (2009) G. Dingemans et al. Physica Status Solidi-Rapid Research Letters
- High efficiency n-type Si solar cells on Al2O3-passivated boron emitters
- (2008) Jan Benick et al. APPLIED PHYSICS LETTERS
- Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface
- (2008) Kunihiko Iwamoto et al. APPLIED PHYSICS LETTERS
- Silicon surface passivation by atomic layer deposited Al2O3
- (2008) B. Hoex et al. JOURNAL OF APPLIED PHYSICS
- Negative charge and charging dynamics in Al[sub 2]O[sub 3] films on Si characterized by second-harmonic generation
- (2008) J. J. H. Gielis et al. JOURNAL OF APPLIED PHYSICS
- On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3
- (2008) B. Hoex et al. JOURNAL OF APPLIED PHYSICS
- Surface passivation of high-efficiency silicon solar cells by atomic-layer-deposited Al2O3
- (2008) J. Schmidt et al. PROGRESS IN PHOTOVOLTAICS
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreAdd your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload Now