Investigation of HfO2 Thin Films on Si by X-ray Photoelectron Spectroscopy, Rutherford Backscattering, Grazing Incidence X-ray Diffraction and Variable Angle Spectroscopic Ellipsometry

标题
Investigation of HfO2 Thin Films on Si by X-ray Photoelectron Spectroscopy, Rutherford Backscattering, Grazing Incidence X-ray Diffraction and Variable Angle Spectroscopic Ellipsometry
作者
关键词
-
出版物
Crystals
Volume 8, Issue 6, Pages 248
出版商
MDPI AG
发表日期
2018-06-12
DOI
10.3390/cryst8060248

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