Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

标题
Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
作者
关键词
Atomic layer deposition, Resistive random access memory, Bottom electrode, Resistive switching parameters, Oxygen vacancy concentration, Trilayer structure
出版物
Nanoscale Research Letters
Volume 12, Issue 1, Pages -
出版商
Springer Nature
发表日期
2017-06-08
DOI
10.1186/s11671-017-2164-z

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