In Situ Analysis of Oxygen Vacancies and Band Alignment in HfO2/TiN Structure for CMOS Applications

标题
In Situ Analysis of Oxygen Vacancies and Band Alignment in HfO2/TiN Structure for CMOS Applications
作者
关键词
Oxygen vacancies, Band alignment, In situ XPS, UPS, Ellipsometry
出版物
Nanoscale Research Letters
Volume 12, Issue 1, Pages -
出版商
Springer Nature
发表日期
2017-04-27
DOI
10.1186/s11671-017-2068-y

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