Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy

出版年份 2017 全文链接

标题

作者

关键词

High-k gate dielectric, Atomic-layer-deposition, Interface stability, Phase separation, Annealing temperature

出版物

Volume 716, Issue -, Pages 1-6

出版商

Elsevier BV

发表日期

2017-05-06

DOI

10.1016/j.jallcom.2017.05.018

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