期刊
IEEE ELECTRON DEVICE LETTERS
卷 30, 期 5, 页码 430-432出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2015897
关键词
AlGaN/GaN; boost converter; field-effect rectifier (FER); fluorine plasma ion implantation; normally-off HEMT; switch-mode power supply
资金
- Hong Kong Research Grants Council [611706]
- Innovation and Technology Fund [ITS/040/08]
We demonstrate a single-chip switch-mode boost converter that features a monolithically integrated lateral field-effect rectifier (L-FER) and a normally off transistor switch. The circuit was fabricated on a standard AlGaN/GaN HEMT epitaxial wafer grown with GaN-on-Si technology. The fabricated rectifier with a drift length of 15 mu m exhibits a breakdown voltage of 470 V, a turn-on voltage of 0.58 V, and a specific on-resistance of 2.04 m Omega . cm(2). The L-FER exhibits no reverse recovery current associated with the turn-off transient because of its unipolar nature. A prototype of GaN-based boost converter that includes monolithically integrated rectifiers and transistors is demonstrated using conventional GaN-on-Si wafers for the first time to prove the feasibility of the GaN-based power IC technology.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据