期刊
IEEE ELECTRON DEVICE LETTERS
卷 36, 期 7, 页码 660-662出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2432171
关键词
AlGaN/GaN diode; high breakdown voltage; low onset voltage; hybrid anode; power devices
资金
- National Natural Science Foundatioin of China [61234006, 61306102]
- National Science and Technology Major Project [2013ZX02308-005]
- Fundamental Research Funds for the Central Universities [ZYGX2013J038]
An AlGaN/GaN-on-Si lateral power diode with recessed metal/Al2O3/III-nitride (MIS)-gated ohmic anode for improved forward conduction and reverse blocking has been realized. The low onset voltage of similar to 0.6 V with good uniformity for the fabricated 189 devices is obtained. In comparison with the conventional Schottky diode the specific ON-resistance (R-ON,R- SP) was reduced by 51% in a device with anode-to-cathode spacing (L-AC) of 5 mu m. The incorporation of high-k dielectric in the recessed gate region enabling two-order lower reverse leakage comparing with the conventional device, leading to a high breakdown voltage over 1.1 kV at leakage current as low as 10 mu A/mm in device with L-AC = 20 mu m. The strong reverse blocking over 600 V was still achieved at 150 degrees C. The proposed diode is compatible with GaN normally OFF MIS high-electron-mobility transistors, revealing its potential for highly efficient GaN-on-Si power ICs.
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