期刊
IEEE ELECTRON DEVICE LETTERS
卷 36, 期 4, 页码 375-377出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2404309
关键词
Schottky barrier diode; GaN on silicon; breakdown voltage; high voltage device; AlGaN/GaN; field plate
资金
- DARPA MPC
- ARPAe SWITCHES
In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific ON-resistance R-ON,R-SP (5.12 m Omega.cm(2)), a low turn-ON voltage (<0.7 V), and a high reverse breakdown voltage (BV) (>1.9 kV) were simultaneously achieved in devices with a 25-mu m anode/cathode distance, resulting in a power figure-of-merit BV2/R-ON,R-SP of 727 MW . cm(-2). The record high BV of 1.9 kV is attributed to the dual field-plate structure.
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