期刊
IEEE ELECTRON DEVICE LETTERS
卷 33, 期 3, 页码 357-359出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2179281
关键词
AlGaN/GaN Schottky diode; lateral Schottky diode; recessed Schottky diode
资金
- German BMBF through LES [13N10908]
GaN-based heterostructure lateral Schottky barrier diodes (SBDs) grown on n-SiC substrate are investigated in this letter. These SBDs own very low onset voltage V-F = 0.43 V, high reverse blocking V-BR > 1000 V, very low capacitive charge of 0.213 nC/A, and a very fast recovery time of 10 ps. These unique qualities are achieved by combining lateral topology, GaN:C back-barrier epitaxial structure, fully recessed Schottky anode (phi(B) = 0.43 eV), and slanted anode field plate in a robust and innovative process. Diode operation at elevated temperature up to 200 degrees C was also characterized.
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