期刊
IEEE ELECTRON DEVICE LETTERS
卷 38, 期 10, 页码 1425-1428出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2017.2737520
关键词
AlGaN/GaN; lateral field-effect rectifier (LFER); Schottky contact; breakdown voltage; punch through
资金
- National Natural Science Foundation of China [11634002, 61204099, 61361166007]
- National Science and Technology Major Project 02 [2013ZX02308-003]
- National Key Research and Development Program of China [2016YFB0400200]
For devices with a 15 micron anode-to-cathode distance, nearly 1.5 times increase in the blocking (breakdown) voltage (from 692 to 1030 V) has been achieved by replacing the alloyed Ohmic contact at the anode electrode of the conventional MOS gated hybrid-anode lateral field-effect rectifier (CMLFER) with a low barrier Schottky contact. The new Schottky-MOS hybrid-anode lateral field-effect rectifier is found to offer comparable low onset voltage (V-ON of 0.68 +/- 0.13 versus 0.65 +/- 0.11 V for CMLFER) independent of the anode-to- cathode distance. The immunity of the punch through caused by drain induced barrier lowering effect is obtained through the low barrier Schottky contact in anode, which is believed to be responsible for the reduction in the leakage current, and the improvement of rectifier breakdown voltage.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据