期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 55, 期 4, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.55.04EG01
关键词
-
A 600 V normally-ON GaN high-electron mobility transistor (HEMT) technology with an intrinsic specific ON resistance R-on . A = 500 m Omega.mm(2) and a breakdown voltage of BVdss similar to 1100V is described. A novel high-power 30-A-class GaN-Si MOSFET cascode device with a back-side source Si laterally diffused MOSFET (LDMOSFET) and an embedded clamp diode are employed to enable the GaN HEMT to withstand 400V and a more than 5 mu s load short circuit condition, as required in switching inverter applications. Considerations for improvement of the GaN lateral HEMT short-circuit withstand capability are addressed. (C) 2016 The Japan Society of Applied Physics
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据