600 V-18 A GaN Power MOS-HEMTs on 150 mm Si Substrates With Au-Free Electrodes

We present the development of an Au-free ohmic contact metallization for high voltage GaN-based high electron mobility transistors (HEMTs). In this letter, low contact resistance (0.81 Omega.mm) is obtained for Au-free electrodes on AlGaN/GaN HEMT structures. Using Au-free ohmic processes, large scale high power GaN metal-oxide-semiconductor HEMTs were successfully fabricated in a procedure fully compatible with standard Si CMOS manufacturing with the maximum drain current of more than 18 A and low OFF-state leakage current of 3 x 10(-7) A at V-DS of 600 V. The practicality of the devices was further demonstrated by measurements of the current collapse effects under severe operating conditions and the temperature dependence of the electrical characteristics.