Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications

Title
Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 30, Issue 12, Pages 1254-1256
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2009-11-07
DOI
10.1109/led.2009.2032938

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