Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer

Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures: Charge quantization and nonparabolic corrections

(2010) T. P. O’Regan et al.   APPLIED PHYSICS LETTERS

Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods

(2009) É. O’Connor et al.   APPLIED PHYSICS LETTERS

On the interface state density at In0.53Ga0.47As/oxide interfaces

(2009) G. Brammertz et al.   APPLIED PHYSICS LETTERS

Half-Cycle Atomic Layer Deposition Reaction Study Using O[sub 3] and H[sub 2]O Oxidation of Al[sub 2]O[sub 3] on In[sub 0.53]Ga[sub 0.47]As

(2009) B. Brennan et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Analytical model for the 1∕f noise in the tunneling current through metal-oxide-semiconductor structures

(2009) F. Crupi et al.   JOURNAL OF APPLIED PHYSICS

Challenges of integration of high-κ dielectric with III–V materials (Invited Paper)

(2009) W. Tsai et al.   MICROELECTRONIC ENGINEERING

In situ H2S passivation of In0.53Ga0.47As∕InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric

(2008) E. O’Connor et al.   APPLIED PHYSICS LETTERS

GaAs interfacial self-cleaning by atomic layer deposition

(2008) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

Electrical Properties of $\hbox{Ga}_{2}\hbox{O}_{3}/ \hbox{GaAs}$ Interfaces and GdGaO Dielectrics in GaAs-Based MOSFETs

(2008) M. Passlack et al.   IEEE ELECTRON DEVICE LETTERS

Interface Defects in HfO[sub 2], LaSiO[sub x], and Gd[sub 2]O[sub 3] High-k/Metal–Gate Structures on Silicon

(2007) P. K. Hurley et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY