The significance of core-level electron binding energies on the proper analysis of InGaAs interfacial bonding

Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods

(2009) É. O’Connor et al.   APPLIED PHYSICS LETTERS

Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

(2009) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

Unpinned Interface Between Al[sub 2]O[sub 3] Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In[sub 0.53]Ga[sub 0.47]As(001)

(2009) Byungha Shin et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Extraction of the Effective Mobility of $ \hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$MOSFETs

(2009) C.L. Hinkle et al.   IEEE ELECTRON DEVICE LETTERS

In situ metal-organic chemical vapor deposition atomic-layer deposition of aluminum oxide on GaAs using trimethyaluminum and isopropanol precursors

(2008) Cheng-Wei Cheng et al.   APPLIED PHYSICS LETTERS

Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high-k gate dielectrics using x-ray photoelectron spectroscopy

(2008) H. J. Oh et al.   APPLIED PHYSICS LETTERS

Performance enhancement of n-channel inversion type InxGa1−xAs metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer

(2008) A. M. Sonnet et al.   APPLIED PHYSICS LETTERS

Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces

(2008) M. Milojevic et al.   APPLIED PHYSICS LETTERS

Capacitance–Voltage Characterization of GaAs–Oxide Interfaces

(2008) G. Brammertz et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

A nanoanalytical investigation of high-k dielectric gate stacks for GaAs based MOSFET devices

(2008) P. Longo et al.   MICROELECTRONIC ENGINEERING