Charged Defect Quantification in Pt∕Al2O3∕In0.53Ga0.47As∕InP MOS Capacitors

Quantification of trap densities at dielectric/III–V semiconductor interfaces

(2010) Roman Engel-Herbert et al.   APPLIED PHYSICS LETTERS

Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals

(2010) Eun Ji Kim et al.   APPLIED PHYSICS LETTERS

Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

(2010) Byungha Shin et al.   APPLIED PHYSICS LETTERS

Unpinned Interface Between Al[sub 2]O[sub 3] Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In[sub 0.53]Ga[sub 0.47]As(001)

(2009) Byungha Shin et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Half-Cycle Atomic Layer Deposition Reaction Study Using O[sub 3] and H[sub 2]O Oxidation of Al[sub 2]O[sub 3] on In[sub 0.53]Ga[sub 0.47]As

(2009) B. Brennan et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition

(2009) R. D. Long et al.   JOURNAL OF APPLIED PHYSICS

GaAs interfacial self-cleaning by atomic layer deposition

(2008) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

Main determinants for III–V metal-oxide-semiconductor field-effect transistors (invited)

(2008) Peide D. Ye   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A